dcr4500a42 phase control thyristor preliminary information ds5942 - 3 j uly 201 2 (ln 2 9654 ) 1 /10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr4500a42* dcr4500a40 dcr4500a36 4200 4000 3600 t vj = - 40c to 125c, i drm = i rrm = 300ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. *4100v @ - 40 o c, 4200v @ 0 o c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr4500a42 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 4200v i t(av) 4500a i tsm 60800a dv/dt* 2000v/s di/dt 200a/s * higher dv/dt selections available outline type code: a (see package details for further information) fig. 1 package outline
semiconductor dcr4500a42 2 /10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 4500 a i t(rms) rms value - 7068 a i t continuous (direct) on - state current - 6330 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 60.8 ka i 2 t i 2 t for fusing v r = 0 18.48 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00603 c/w single side cooled anode dc - 0.01024 c/w cathode dc - 0.01467 c/w r th(c - h) thermal resistance C case to heatsink clamping force 83.0kn double side - 0.001 c/w (with mounting compound) single side - 0.002 c/w t vj virtual junction temperature blocking v drm / v rrm - 12 5 c t stg storage temperature range - 55 125 c f m clamping force 74.0 91.0 kn
3 /10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 300 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 2000 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 200 a/s gate source 30v, 10 ? , non - repetitive - 500 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500 to 2200a at t case = 125c - 0.75 v threshold voltage C high level 2200 to 8000a at t case = 125c - 0.92 v r t on - state slope resistance C low level 500a to 2200a at t case = 125c - 0.205 m ? on - state slope resistance C high level 2200a to 8000a at t case = 125c - 0.122 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time i t = 5000a, t j = 125c, v r = 200v, di/dt = 5a/s, 900 s dv dr /dt = 20v/s linear q s stored charge i t = 3000a, t j = 125c, di/dt C 1a/s, v rpeak ~2500v, v r ~ 1700v 2920 4875 c i rr reverse recovery current 42 57 a i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr4500a42 4 /10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 300 ma i gd gate non - trigger current at 50% v drm, t case = 125c 10 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = - 0.208640 b = 0.171688 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000113 d = - 0.003842 these values are valid for t j = 125c for i t 500a to 8000a 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.5 1 1.5 2 instantaneous on-state voltage v t - (v) instantaneous on-state current i f - (a) vtm max 125oc vtm min 125oc vtm max 25oc vtm min 25oc
5 /10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 2 4 6 8 10 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( c) 180 120 90 60 30 0 2 4 6 8 10 12 14 16 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor dcr4500a42 6 /10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case -( c) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 mean on-state current, i t(av ) - (a) maximum heatsink temperature t heatsink -( o c) d.c. 180 120 90 60 30 1 2 3 4 r i (c/kw) 3.01541 1.048955 0.983519 0.983519 0.703874 1.904794 0.059 0.059 r i (c/kw) 3.156003 4.092806 1.556555 1.623962 2.69023 13.79162 0.059 0.205916 r i (c/kw) 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119 0.08069 double side cooled anode side cooled cathode side cooled t i (s) t i (s) t i (s) ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 0.44 0.31 180 0.42 0.30 180 0.42 0.30 120 0.49 0.43 120 0.47 0.41 120 0.47 0.41 90 0.55 0.49 90 0.52 0.46 90 0.52 0.46 60 0.60 0.55 60 0.57 0.52 60 0.57 0.52 30 0.64 0.61 30 0.61 0.58 30 0.60 0.58 15 0.66 0.64 15 0.62 0.61 15 0.62 0.60
7 /10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge fig.13 reverse recovery current 1 10 100 1 10 100 number of cycles surge current, i tsm - (ka) conditions: tcase = 125c v r =0 pulse width = 10ms 0 20 40 60 80 100 120 140 160 180 200 1 10 100 pulse width, t p - (ms) surge current, i tsm - (ka) 0 3 6 9 12 15 18 21 24 27 30 i 2 t (ma 2 s) i 2 t i tsm conditions: t case = 125c v r = 0 half-sine wave 0 5000 10000 15000 20000 25000 0 5 10 15 20 25 30 rate of decay of on-state current, di/dt - (a/us) stored charge, q s - (uc) q s max = 4874.7*(di/dt) 0.4822 q s min = 2920.8*(di/dt) 0.581 conditions: t j = 125oc, v r peak ~ 2500v v rm ~ 1700v snubber as required to control reverse voltage 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 rate of decay of on-state current, di/dt - (a/us) reverse recovery current, i rr - (a) conditions: t j = 125oc, v r peak ~ 2500v v rm ~ 1700v snubber as required to control reverse voltage i rr max = 57.242*(di/dt) 0.7466 i rr min = 41.99*(di/dt) 0.7893
semiconductor dcr4500a42 8 /10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c
9 /10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring weight: 2.6kg package outline type code: a fig.16 package outline
semiconductor dcr4500a42 10 /10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific ap plication . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional prod uct information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guara ntee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applic ations where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must n ot be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in t he product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is lik ely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for prod uction. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operatio ns dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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